| ~ | | A single HMC-2500 x32 model based on:
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| ~ | | [1] DRAMSpec: a high-level DRAM bank modelling tool
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| ~ | | developed at the University of Kaiserslautern. This high level tool
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| | ~ | Changeset 10862:40d9e1fcdb1b
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| | ~ | ---------------------------
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| | ~ | imported patch addhmctiming.patch |
| - | | uses RC (resistance-capacitance) and CV (capacitance-voltage) models to
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| - | | estimate the DRAM bank latency and power numbers.
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| - | | [2] A Logic-base Interconnect for Supporting Near Memory Computation in the
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| - | | Hybrid Memory Cube (E. Azarkhish et. al)
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| - | | Assumed for the HMC model is a 30 nm technology node.
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| - | | The modelled HMC consists of a 4 Gbit part with 4 layers connected with
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| - | | TSVs. Each layer has 16 vaults and each vault consists of 2 banks per layer.
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| - | | In order to be able to use the same controller used for 2D DRAM generations
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| - | | for HMC, the following analogy is done:
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| - | | Channel (DDR) => Vault (HMC)
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| - | | device_size (DDR) => size of a single layer in a vault
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| - | | ranks per channel (DDR) => number of layers
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| - | | banks per rank (DDR) => banks per layer
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| - | | devices per rank (DDR) => devices per layer ( 1 for HMC).
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| - | | The parameters for which no input is available are inherited from the DDR3
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| - | | configuration. |